? 1996 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1000 v v cgr t j = 25 c to 150 c; r ge = 1 m w 1000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c50a i c90 t c = 90 c25a i cm t c = 25 c, 1 ms 100 a ssoa v ge = 15 v, t vj = 125 c, r g = 33 w i cm = 50 a (rbsoa) clamped inductive load, l = 100 m h @ 0.8 v ces p c t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (m3) 1.13/10 nm/lb.in. weight to-204 = 18 g, to-247 = 6 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 3 ma, v ge = 0 v 1000 v v ge(th) i c = 250 m a, v ce = v ge 2.5 5 v i ces v ce = 0.8 ? v ces t j = 25 c 250 m a v ge = 0 v t j = 125 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 25n100 3.5 v 25n100a 4.0 v to-247 ad (ixgh) g c e to-204 ae (ixgm) c g = gate, c = collector, e = emitter, tab = collector v ces i c25 v ce(sat) low v ce(sat) ixgh/ixgm 25 n100 1000 v 50 a 3.5 v high speed igbt ixgh/ixgm 25 n100a 1000 v 50 a 4.0 v features l international standard packages l 2nd generation hdmos tm process l low v ce(sat) - for low on-state conduction losses l high current handling capability l mos gate turn-on - drive simplicity l voltage rating guaranteed at high temperature (125 c) applications l ac motor speed control l dc servo and robot drives l dc choppers l uninterruptible power supplies (ups) l switch-mode and resonant-mode power supplies advantages l easy to mount with 1 screw (to-247) (isolated mounting screw hole) l high power density 91516e (3/96)
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixgh 25n100 ixgm 25n100 ixgh 25n100a ixgm 25n100a symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 8 15 s pulse test, t 300 m s, duty cycle 2 % c ies 2750 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 200 pf c res 50 pf q g 130 180 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 25 60 nc q gc 55 90 nc t d(on) 100 ns t ri 200 ns t d(off) 500 ns t fi 25n100a 500 ns e off 25n100a 5 mj t d(on) 100 ns t ri 250 ns e on 3.5 mj t d(off) 720 1000 ns t fi 25n100 950 3000 ns 25n100a 800 1500 ns e off 25n100 10 mj 25n100a 8 mj r thjc 0.62 k/w r thck 0.25 k/w to-247 ad outline to-204ae outline inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 300 m h, v ce = 0.8 v ces , r g = r off = 33 w remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g 1 = gate 2 = emitter case = collector 1 = gate 2 = collector 3 = emitter tab = collector inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 300 m h v ce = 0.8 v ces , r g = r off = 33 w remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g
? 1996 ixys all rights reserved t j - degrees c -50 -25 0 25 50 75 100 125 150 bv / v (th) - normalized 0.6 0.7 0.8 0.9 1.0 1.1 1.2 t j - degrees c -50 -25 0 25 50 75 100 125 150 v ce(sat) - normalized 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v ce - volts 012345 i c - amperes 0 5 10 15 20 25 30 35 40 45 50 v g e = 15v 7v 9v v ge - volts 6 7 8 9 10 11 12 13 14 15 v ce - volts 0 1 2 3 4 5 6 7 8 9 10 v ge - volts 012345678910 i c - amperes 0 10 20 30 40 50 v ce - volts 0 2 4 6 8 10 12 14 16 18 20 i c - amperes 0 20 40 60 80 100 120 140 160 180 200 9v 7v 11v 13v t j = 25c t j = 25c v ge = 15v i c = 12.5a i c = 25a i c = 50a i c = 12.5a i c = 25a i c = 50a t j = - 40c t j = 125c t j = 25c v ce = 10v 13v 11v t j = 25c v ge(th) i c = 250a bv ces i c = 250a 25n100g1.jnb fig. 3 collector-emitter voltage fig. 4 temperature dependence vs. gate-emitter voltage of output saturation voltage fig. 5 input admittance fig. 6 temperature dependence of breakdown and threshold voltage fig. 1 saturation characteristics fig. 2 output characterstics ixgh 25n100 ixgm 25n100 ixgh 25n100a ixgm 25n100a
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixgh 25n100 ixgm 25n100 ixgh 25n100a ixgm 25n100a v ce - volts 0 5 10 15 20 25 capacitance - pf 0 400 800 1200 1600 2000 2400 c res gate charge - ncoulombs 0 255075100125150 v ge - volts 1 3 5 7 9 11 13 15 v ce - volts 0 200 400 600 800 1000 i c - amperes 0.01 0.1 1 10 100 pulse width - seconds 0.0001 0.001 0.01 0.1 1 10 z thjc (k/w) 0.01 0.1 1 single pulse d=0.2 d=0.5 d = duty cycle v ce = 800v i c = 25a i g = 10ma t j = 125c dv/dt < 3v/ns c oes c ies f = 1mhz d=0.1 d=0.05 d=0.02 d=0.01 25n100g2.jnb fig.10 transient thermal impedance fig.9 capacitance curves fig.7 gate charge fig.8 turn-off safe operating area
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